首页>
外国专利>
Technique for detecting memory cells that are over programmed after programming the memory cells adjacent
Technique for detecting memory cells that are over programmed after programming the memory cells adjacent
展开▼
机译:在对邻近的存储器单元进行编程之后,用于检测被过度编程的存储器单元的技术
展开▼
页面导航
摘要
著录项
相似文献
摘要
In (system memory or other type of) the memory cell is programmed by changing the threshold voltage non-volatile semiconductor memory system. The timing of the programming for the various memory cells in the system is different due to some memory cells, there is a possibility that the over programming. Thus, for example, there is a possibility that the value or the threshold voltage of the cell has been aimed, deviates from the range that is of interest. Programming for the cell causes the present invention includes determining that the memory cells of adjacent rows to whether or not it has been over programmed.
展开▼