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Detecting by means of a programmed memory cells according to a programming of adjacent memory cells
Detecting by means of a programmed memory cells according to a programming of adjacent memory cells
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机译:通过编程的存储单元根据相邻存储单元的编程进行检测
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摘要
In a non-volatile semiconductor memory system (or other type of memory system), a memory cell is programmed by changing the threshold voltage of that memory cell. Because of variations in the programming speeds of different memory cells in the system, the possibility exists that some memory cells will be over programmed. That is, in one example, the threshold voltage will be moved past the intended value or range of values. The present invention includes determining whether the memory cells are over programmed due to programming cells of an adjacent row.
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