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A pinch-off voltage measurement circuit and a method of manufacturing the transistor, a method of manufacturing a field effect transistor

机译:夹断电压测量电路和晶体管的制造方法,场效应晶体管的制造方法

摘要

PROBLEM TO BE SOLVED: To provide a pinch-off voltage measuring circuit for a transistor with improved measurement accuracy, its manufacturing method, and an field- effect transistor manufacturing method capable of highly accurately controlling VTH. SOLUTION: The pinch-off voltage measuring circuit for a transistor for measuring the pinch-off voltage of a field-effect transistor and its manufacturing method comprise a channel layer 2 including the same impurity as the channel forming region of the field-effect transistor and anode-side and cathode-side gate conduction layers 5 which form p-n junctions with the channel layer 2. The p-n junction J1 between the anode-side gate conduction layer and channel layer has characteristics of a larger leak current than the cathode-side p-n junction J2. In the field-effect transistor manufacturing method, a field-effect transistor which comprises the measuring circuit on the same substrate is manufactured.
机译:要解决的问题:提供一种具有改善的测量精度的用于晶体管的夹断电压测量电路,其制造方法以及能够高度精确地控制VTH的场效应晶体管的制造方法。解决方案:用于测量场效应晶体管的夹断电压的晶体管的夹断电压测量电路及其制造方法包括沟道层2,该沟道层2包含与场效应晶体管的沟道形成区域相同的杂质,并且与沟道层2形成pn结的阳极侧和阴极侧栅极导电层5。阳极侧栅极导电层和沟道层之间的pn结J1具有比阴极侧pn结大的泄漏电流的特性。 J2。在场效应晶体管的制造方法中,制造在同一基板上具有测量电路的场效应晶体管。

著录项

  • 公开/公告号JP4608717B2

    专利类型

  • 公开/公告日2011-01-12

    原文格式PDF

  • 申请/专利权人 ソニー株式会社;

    申请/专利号JP19990375145

  • 发明设计人 井本 努;和田 伸一;

    申请日1999-12-28

  • 分类号G01R31/26;H01L29/78;H01L29/80;

  • 国家 JP

  • 入库时间 2022-08-21 18:20:14

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