Being smooth, the Cu filling up body of the concave section where the air bubble which uses the Cu seed layer which does not cohere does not exist

摘要

The agglomeration of Cu on the baseplate is controlled, the method of forming the filling up body of the bulk Cu where at the same time the air bubble does not exist in the concave section inside the integrated circuit is offered. With one execution example, as for particular method, the surface, and at least the side and it possesses the process which accumulates the metal content uetsuteingu membrane with respect to process, and the aforementioned barrier membrane which accumulate the barrier membrane with respect to surface structure of process and the aforementioned baseplate which offer the baseplate which possesses the surface structure which at least possesses one which possesses the base concave section. Particular method furthermore has the process which the vapor phase grows Cu which is the metal on the aforementioned metal content uetsuteingu membrane physically. The aforementioned baseplate temperature although the metal seed layer of smooth Cu is formed on the aforementioned metal content uetsuteingu membrane, is sufficient height. Cu which is the metal where the air bubble does not exist is good being overturned the description above one concave circles at least.