The manner which features that it includes the fact that it uses silicon based center on

摘要

The present invention relates to the preparation of free-standing substrate having a group III nitride. More particularly, to a method of group III nitride, to achieve a free-standing substrate of gallium nitride (GaN) in particular from the initial substrate by epitaxy, the invention evaporates naturally during the epitaxy process of the Group III nitride as a sacrificial layer for, it is directed to a method which is characterized in that it comprises the deposition of an intermediate layer of single-crystal silicon base. In particular, the method allows the diameter to obtain a group III nitride independent substrate formed more than 2 "flat. [Selection Figure Figure 3