After growing the monocrystal nitriding gallium film on the sapphire substrate which possesses the surface from production manner of the IIIV group

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a group III-V nitride-based semiconductor self-standing substrate having a prescribed off angle suitable for epitaxially growing a group III-V nitride-based semiconductor.;SOLUTION: The method for producing a group III-V nitride-based semiconductor self-standing substrate comprises (process A) using a sapphire substrate having a surface inclined at an angle of 0.07-20° from C-surface to a-axis direction or m-axis direction, (process B) growing an epitaxial layer of the group III-V nitride-based semiconductor single crystal on the substrate, and (process C) peeling off the epitaxial layer from the different kind substrate.;COPYRIGHT: (C)2006,JPO&NCIPI