A comparative analysis of synthesizing gallium nitride films: On gallium arsenide and sapphire substrates

机译：合成氮化镓膜的比较分析：在砷化镓和蓝宝石衬底上

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The characteristics of gallium nitride (GaN) films growth on gallium arsenide (GaAs) and sapphire (Al2O3) by Metal-organic vapor phase epitaxy (MOVPE) system are presented. Comparing the results we can saw the advantages and disadvantages of use one or other substrate in order to find the best experimental conditions for obtain c-GaN films with good properties.

机译：通过金属 - 有机气相外延（MOVPE）系统对砷化镓（GaAs）和蓝宝石（Al 2 O）进行氮化镓（GaN）膜生长的特征提出了。比较结果我们可以看到使用一个或其他基材的优点和缺点，以便找到具有良好性质的C-GaN薄膜的最佳实验条件。

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《International Conference on Electrical Engineering, Computing Science and Automatic Control》|2008年||共3页
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Guarneros C.; Vilchis H.; Sanchez V. M.; Escobosa A.;
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中图分类 TP3-53;
关键词
GaAs; GaN films; MOVPE; sapphire;

机译：GA as;Gan films;mov PE;sapphire;

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1. Structural and Optical Studies of Thin Films of Aluminum Nitride Grown via Ion-Plasma Sputtering on Gallium Arsenide Substrates with Different Orientations [J] . P. V. Seredin, D. A. Goloschapov, A. S. Lenshin, Bulletin of the Russian Academy of Sciences. Physics . 2017,第9期

机译：具有不同取向的砷化镓基材上通过离子等离子体溅射生长的氮化铝薄膜的结构和光学研究
2. Thermal characterization of gallium arsenic nitride epilayer on gallium arsenide substrate using pulsed photothermal reflectance technique [J] . Yimin Zhao, George Chen, Shanzhong Wang, Thin Solid Films . 2004,第2期

机译：脉冲光热反射技术对砷化镓衬底上氮化砷化镓外延层的热表征
3. Epitaxial gallium nitride thin films grown on silicon substrates utilizing gallium nitride seed-layer formed by liquid source precursor [J] . Ky Nam Hoang, Hong Tak Kim, Woosuk Jun, The Korean journal of chemical engineering . 2012,第1期

机译：利用由液体源前驱物形成的氮化镓种子层在硅衬底上生长的外延氮化镓薄膜
4. A comparative analysis of synthesizing gallium nitride films: On gallium arsenide and sapphire substrates [C] . Guarneros C., Vilchis H., Sanchez V. M., International Conference on Electrical Engineering, Computing Science and Automatic Control . 2008

机译：合成氮化镓膜的比较分析：在砷化镓和蓝宝石衬底上
5. Indium gallium arsenide and gallium indium nitride arsenide(antimony) 1064 NM photodetectors and solar cells on gallium arsenide substrates. [D] . Jackrel, David Bryan. 2006

机译：砷化镓铟和砷化镓氮化砷化铟（锑）1064 NM光电探测器和砷化镓衬底上的太阳能电池。
6. Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate [O] . Norizzawati Mohd Ghazali, Kanji Yasui, Abdul Manaf Hashim 2014

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7. Raman Measurements and Stress Analysis in Gallium Ion Implanted Gallium Nitride Epitaxial Layers on Sapphire [O] . Mal, S., Singha, A., Dhara, S., 2006

机译：镓离子注入镓中的拉曼光谱和应力分析蓝宝石上的氮化物外延层
8. Gallium Arsenide Thin Films on Tungsten/Graphite Substrates: Phase II. Topical Report: Thin Film Gallium Arsenide Solar Cells on Tungsten/Graphite Substrates [R] . Chu, S. S. 1977

机译：钨/石墨基板上的砷化镓薄膜：第二阶段。专题报道：钨/石墨基板上的薄膜砷化镓太阳能电池

A comparative analysis of synthesizing gallium nitride films: On gallium arsenide and sapphire substrates

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