首页>
外国专利>
Doping the dopant impurity of desire at least in the semiconductor raw materials the semiconductor substrate in
Doping the dopant impurity of desire at least in the semiconductor raw materials the semiconductor substrate in
展开▼
机译:至少在半导体原料中的半导体衬底中掺杂期望的掺杂杂质。
展开▼
页面导航
摘要
著录项
相似文献
摘要
PROBLEM TO BE SOLVED: To provide a method for producing a solar cell, in which the production cost of semiconductor substrates can be reduced significantly, while eliminating aging effect of photoelectric conversion efficiency.;SOLUTION: The method for producing a semiconductor substrate comprises a step of producing a polycrystalline wafer by slicing a polycrystalline rod, grown by doping a semiconductor material with a desired impurity dopant; and a step for increasing the grain size of the polycrystalline wafer or single crystallization of it from the surface on one side down to a desired depth by zone melt re-crystallization. The method for producing a solar cell comprises a step for forming a solar cell, such that solar light is received from the side subjected to zone melt re-crystallization using a semiconductor substrate thus produced as a starting material, and a step of removing at least a layer on the rear surface, subjected to gettering with impurities prior to forming an electrode on the rear surface in the solar cell forming process.;COPYRIGHT: (C)2002,JPO
展开▼