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Doping the dopant impurity of desire at least in the semiconductor raw materials the semiconductor substrate in

机译:至少在半导体原料中的半导体衬底中掺杂期望的掺杂杂质。

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a solar cell, in which the production cost of semiconductor substrates can be reduced significantly, while eliminating aging effect of photoelectric conversion efficiency.;SOLUTION: The method for producing a semiconductor substrate comprises a step of producing a polycrystalline wafer by slicing a polycrystalline rod, grown by doping a semiconductor material with a desired impurity dopant; and a step for increasing the grain size of the polycrystalline wafer or single crystallization of it from the surface on one side down to a desired depth by zone melt re-crystallization. The method for producing a solar cell comprises a step for forming a solar cell, such that solar light is received from the side subjected to zone melt re-crystallization using a semiconductor substrate thus produced as a starting material, and a step of removing at least a layer on the rear surface, subjected to gettering with impurities prior to forming an electrode on the rear surface in the solar cell forming process.;COPYRIGHT: (C)2002,JPO
机译:解决的问题:提供一种太阳能电池的制造方法,其中可以在降低光电转换效率的时效的同时,显着降低半导体基板的制造成本。解决方案:半导体基板的制造方法包括以下步骤:通过切片多晶棒来生产多晶晶片的步骤,该多晶棒是通过用期望的杂质掺杂剂掺杂半导体材料而生长的;通过区域熔融再结晶来增加多晶晶片的晶粒尺寸或使单晶从一侧表面向下到所需深度的步骤。该太阳能电池的制造方法包括以下步骤:形成太阳能电池,以使用这样制造的半导体基板为起始原料,从进行区域熔融重结晶的一侧接收太阳光;以及至少去除该太阳能电池的步骤。背面的一层,在太阳能电池形成过程中在背面上形成电极之前要经过杂质吸杂处理。;版权所有:(C)2002,JPO

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