In order to make the debris accumulation speed cause which differs the debris which generates by the system and mannered null plasma formation

摘要

Systems and methods for reducing the internal components on the EUV source, the influence of the plasma generated debris is disclosed. In an aspect 1, EUV measurement monitor capable of sufficient temperature, and has a heater for heating the internal multi-layer filtering mirror to remove from the mirror debris deposited are provided. In another aspect, a device having a debris different deposition rates to remove from the EUV light source collector mirror plasma generated debris, in different areas of the collector mirror above is disclosed. In certain embodiments, it combines with Li debris, EUV collector mirror system may include a hydrogen source that generates LiH the collector surface, and a sputtering system for sputtering LiH from the collector surface. In another embodiment, the plasma etch rate is controlled, a device for etching the surface of the EUV light source collector mirror debris is disclosed.