Writing method and resistance change of a resistive nonvolatile memory element type non-volatile storage device

摘要

Even a resistance change element the state of the half-LR may appear, is to provide a method of writing resistance change element that makes it possible to modify the normal low-resistance state, to ensure maximum resistance change window. A method of writing data for (10a) variable resistance element to transition reversibly between the low resistance state and high resistance state in response to the polarity of the voltage applied, the reference upper electrode (11) and the lower electrode (14t) as a voltage to be applied to the low-resistance state (high resistance writing step of applying a positive voltage in order to (401) high-resistance state resistance change element (10a) and (405), resistance change element (10a) and (406) and (408), a positive voltage after a negative voltage is applied by the (408) low resistance writing step low resistance write step of applying a negative voltage to the (402) and 403) and a (404) low resistance stabilization step of writing (401) the high resistance state through the low resistance state, the resistance change element (10a) by applying a.