Writing methods and resistance change of a resistive nonvolatile memory element type non-volatile storage device

摘要

A method of writing a resistive nonvolatile memory element to improve the unstable resistance change phenomenon that has been conventionally generated, the second resistance state (for example, low-resistance state) resistance state of a resistive nonvolatile memory element is in If it is determined (eg, high-resistance state) to remain in the first resistance state can not transition, (1) a first resistance state (for example, a high resistance state) and the second normal voltage for the transition to the example ( , the following (for example, a positive voltage) pulse strength recovery voltage of the first polarity is the same (for example, the VH) second voltage amplitude is greater than VH), the strong recovery voltage pulse (2) of the first then, the second resistance state (for example, resistance state) first normal voltage for the transition to (for example, -VL) including but not limited to, having the pulse width longer than the width of the pulse, the first voltage (for example, - strong recovery voltage of the second polarity is the same as the VL) (for example, once, to be applied to a resistive nonvolatile memory element composed of at least a little recovery voltage pulse set with two-pulse and a negative voltage) pulse.