Improved Resistance Switching Characteristics in Ti-Doped $hbox{Yb}_{2}hbox{O}_{3}$ for Resistive Nonvolatile Memory Devices

摘要

A conventional approach of doping to control the bistable resistance switching in $hbox{Yb}_{2}hbox{O}_{3}$ was investigated for nonvolatile memory applications. With the help of Ti doping into oxide films during the process, better cycle-to-cycle resistance distribution and switching voltage uniformity were found due to modulation of current conduction mechanism from space-charge-limited current in $hbox{Yb}_{2}hbox{O}_{3}$ to Schottky type in $hbox{YbTiO}_{x}$. The program/erase cycles with successive readout operation over $hbox{10}^{5}$ cycles can be achieved without any degradation. No data loss was found upon continuous readout process at both room temperature and 85 $^{circ}hbox{C}$. The $hbox{Ni/YbTiO}_{x}/hbox{TaN}$ memory is a promising candidate to be integrated into future memory processes.