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METHODS OF FORMING NON-VOLATILE MEMORY STRUCTURE WITH CRESTED BARRIER TUNNEL LAYER
METHODS OF FORMING NON-VOLATILE MEMORY STRUCTURE WITH CRESTED BARRIER TUNNEL LAYER
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机译:形成有障碍壁隧道层的非挥发性记忆结构的方法
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摘要
Embodiments of methods of forming non-volatile memory structures are provided. In one such embodiment, first and second source/drain regions are formed on a substrate so that the first and second source/drain regions define an intervening channel region. A charge blocking layer is formed over the channel region. A trapping layer is formed over the charge blocking layer. A tunnel layer of two or more sub-layers is formed over the trapping layer, where the two or more sub-layers form a crested barrier tunnel layer. A control gate is formed over the tunnel layer.
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