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HEMT WITH IMPROVED QUANTUM CONFINEMENT OF ELECTRONS
HEMT WITH IMPROVED QUANTUM CONFINEMENT OF ELECTRONS
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机译:具有改进的电子量子约束的HEMT
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摘要
A HEMT with improved electron confinement is formed by removing semiconductor cap material between the channel and the source and drain regions. The source and drain regions can be isolated from the gate region by an insulating layer. Significant noise reduction can be achieved as a result of these techniques. Also, removing the semiconductor cap material can provide an increased breakdown voltage for the transistor.
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