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PLASMA CVD DEVICE, METHOD FOR DEPOSITING THIN FILM, AND METHOD FOR PRODUCING MAGNETIC RECORDING MEDIUM

机译:等离子体CVD装置,薄膜​​沉积方法和磁记录介质的制备方法

摘要

A plasma CVD device that deposits a thin film without using a filament is provided. The plasma CVD device according to the present invention includes: a chamber (1); ring-shaped ICP electrodes (17) and (18) disposed within the chamber; first high-frequency power supplies (7) and (8) electrically connected to the ICP electrodes; a gas supply mechanism that supplies a raw material gas into the chamber; an evacuation mechanism that evacuates the chamber; a disc substrate (2) disposed within the chamber so as to face the ICP electrodes; a second high-frequency power supply (6) connected to the disc substrate; an earth electrode disposed within the chamber on the opposite side of the disc substrate so as to face the ICP electrodes; and plasma walls (24) and (25) disposed within the chamber and provided so as to surround a space between the ICP electrodes and the disc substrate. Here, the plasma wall is set at a float potential.
机译:提供一种不使用细丝而沉积薄膜的等离子体CVD装置。根据本发明的等离子体CVD装置包括:腔室( 1 );和放置在室内的环形ICP电极( 17 )和( 18 );第一高频电源( 7 )和( 8 )电连接到ICP电极;气体供应机构,其将原料气体供应到腔室中;排空该腔室的疏散机构;盘片基板( 2 )设置在腔室内以面对ICP电极;第二高频电源( 6 )连接到盘基片;接地电极,其设置在盘片基板的相对侧上的腔室内,以面对ICP电极。等离子体壁( 24 )和等离子体壁( 25 )设置在腔室内并设置成包围ICP电极和盘基板之间的空间。在此,等离子体壁被设定为浮置电位。

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