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PLASMA CVD DEVICE, METHOD FOR DEPOSITING THIN FILM, AND METHOD FOR PRODUCING MAGNETIC RECORDING MEDIUM

机译:等离子体CVD装置,薄膜​​沉积方法和磁记录介质的制备方法

摘要

ABSTRACT PLASMA CVD DEVICE, METHOD FOR DEPOSITING THIN FILM, AND METHOD FOR PRODUCING MAGNETIC RECORDING MEDIUMA plasma CVD device that deposits a thin film withoutusing a filament is provided. The plasma CVD device according to the present invention includes: a chamber (1); ring-shaped ICP electrodes (17) and (18) disposed within the chamber; first high-frequency power supplies (7) and (8)electrically connected to the ICP electrodes; a gas supply mechanism that supplies a raw material gas into the chamber; an evacuation mechanism that evacuates the chamber; a disc substrate (2) disposed within the chamber so as to face the ICP electrodes; a second high-frequency power supply (6) connected to the disc substrate; an earth electrode disposed within the chamber on the opposite side of the disc substrate so as to face the ICP electrodes; and plasma walls (24) and (25) disposed within the chamber and provided so as to surround a space between the ICP electrodes and the disc substrate. Here, the plasma wall is set at a float potential. Figure 1
机译:抽象的等离子体化学气相沉积设备,沉积薄膜的方法和生产磁记录介质的方法等离子CVD装置可沉积薄膜而不会提供使用灯丝。根据本发明的等离子体CVD装置包括:腔室(1);和设置在室内的环形ICP电极(17)和(18);第一个高频电源(7)和(8)电连接到ICP电极;气体供应机构,其将原料气体供应到腔室中;排空该腔室的疏散机构;圆盘基片(2)设置在腔室内以面对ICP电极。第二个高频电源(6) 连接至光盘基板;接地电极,其设置在盘片基板的相对侧上的腔室内,以面对ICP电极。等离子体壁(24)和(25)设置在腔室内并围绕ICP电极和盘之间的空间设置 基质。在此,等离子体壁被设定为浮置电位。图1

著录项

  • 公开/公告号SG167986A1

    专利类型

  • 公开/公告日2011-02-28

    原文格式PDF

  • 申请/专利权人 YOUTEC CO. LTD.;

    申请/专利号SG2010097111

  • 申请日2009-06-30

  • 分类号C23C16/509;C23C16/44;G11B5/85;H05H1/46;

  • 国家 SG

  • 入库时间 2022-08-21 18:04:10

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