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HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED AT DIFFERENT PROCESS STAGES OF A SEMICONDUCTOR DEVICE
HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED AT DIFFERENT PROCESS STAGES OF A SEMICONDUCTOR DEVICE
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机译:在半导体器件的不同过程阶段形成的高K金属栅电极结构
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摘要
Sophisticated high-k metal gate electrode structures are provided on the basis of a hybrid process strategy in which the work function of certain gate electrode structures is adjusted in an early manufacturing stage, while, in other gate electrode structures, the initial gate stack is used as a dummy material and is replaced in a very advanced manufacturing stage. In this manner, superior overall process robustness in combination with enhanced device performance may be achieved.
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