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Method of doping P-type impurity ions in dual poly gate and method of forming dual poly gate using the same
Method of doping P-type impurity ions in dual poly gate and method of forming dual poly gate using the same
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机译:在双多晶硅栅极中掺杂P型杂质离子的方法以及使用该方法形成双多晶硅栅极的方法
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摘要
A method of doping p-type impurity ions in a dual poly gate, comprising: forming a polysilicon layer doped with n-type impurity ions on a substrate with a gate insulation layer being interposed between the polysilicon layer and the substrate; exposing a region of the polysilicon layer; implementing a first doping of p-type impurity ions into the exposed region of the polysilicon layer by ion implantation so with a projection range Rp to a predetermined depth of the polysilicon layer; and implementing a second doping of p-type impurity ions into the exposed region of the polysilicon layer doped with the p-type impurity ions by plasma doping with a sloped doping profile.
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