Method of doping p-type impurity ions in dual poly gate and forming the dual poly gate using the same

摘要

to form p-type impurity -doped poly gate of the dual method of the invention is via a gate insulating film on the substrate , and , the step of exposing the n-type impurity ions are doped polysilicon film p-type region , a p-type impurity ions into the polysilicon film of the exposed p-type doped region and the step of using an ion implant method , and exposed a p-type impurity ions into the polysilicon film of the p-type doped region comprises the step of using the plasma doping method .