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SRAM cell with read buffer controlled for low leakage current
SRAM cell with read buffer controlled for low leakage current
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机译:带有读缓冲器的SRAM单元可控制以实现低漏电流
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摘要
A functional memory of the integrated circuit includes row and column periphery units and an array of memory cells having a core storage element and a read buffer. The functional memory further includes a read buffer supply line that is connected to the read buffer, wherein the read buffer supply line is switchable between an operating mode output and a low-power mode output of a read buffer supply that is separate from core storage element supplies.
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