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PROCESS USING OXIDE SUPPORTER FOR MANUFACTURING A CAPACITOR LOWER ELECTRODE OF A MICRO STACKED DRAM
PROCESS USING OXIDE SUPPORTER FOR MANUFACTURING A CAPACITOR LOWER ELECTRODE OF A MICRO STACKED DRAM
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机译:使用氧化物支持剂制造微堆叠DRAM的电容器下电极的过程
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摘要
A process using oxide supporter for manufacturing a capacitor lower electrode of a micron stacked DRAM is disclosed. First, form a stacked structure. Second, form a photoresist layer on an upper oxide layer and then etch them. Third, deposit a polysilicon layer onto the upper oxide layer and the nitride layer. Fourth, deposit a nitrogen oxide layer on the polysilicon layer and the upper oxide layer. Sixth, partially etch the nitrogen oxide layer, the polysilicon layer and the upper oxide layer to form a plurality of vias. Seventh, oxidize the polysilicon layer to form a plurality of silicon dioxides surround the vias. Eighth, etch the nitride layer, the dielectric layer and the lower oxide layer beneath the vias. Ninth, form a metal plate and a capacitor lower electrode in each of the vias. Tenth, etch the nitrogen oxide layer, the polysilicon layer, the nitride layer and the dielectric layer.
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