Semiconductor DRAM with stacked capacitor - has upper capacitor electrode covering top surface and both side surfaces of lower capacitor electrode

摘要

The top capacitor electrode has coupled top and bottom layers, while a lower capacitor electrode (7) surrounds the top capacitor electrode lower layer. Between the top and bottom capacitor electrode is a capacitor insulating film (8). The top capacitor electrode top layer (9b) is so shaped that it covers the top face and both side faces of the bottom capacitor electrode. Pref. the bottom capacitor electrode has two electrode layers (7a,b) in electric interconnection. The first electrode layer is of such configuration as to extend below the lower layer of the top capacitor electrode (9a), with a capacitor insulating film in between. ADVANTAGE - Sufficient capacity for stable data storage even with reduced size of relevant components.