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Robust shallow trench isolation structures and a method for forming shallow trench isolation structures
Robust shallow trench isolation structures and a method for forming shallow trench isolation structures
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机译:稳健的浅沟槽隔离结构及其形成方法
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摘要
In a semiconductor substrate, a shallow trench isolation structure having a dielectric material disposed in voids of a trench-fill material and a method for forming the shallow trench isolation structure. The voids may be formed during a wet clean process after the dielectric material is formed in the trench. A conformal silicon nitride layer is formed over the substrate and in the voids. After removal of the silicon nitride layer, the voids are at least partially filled by the silicon nitride material.
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