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Method for reading and programming a charge-trap memory device compensated for an array/second-bit/neighbor-bit effect
Method for reading and programming a charge-trap memory device compensated for an array/second-bit/neighbor-bit effect
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机译:读取和编程补偿了阵列/第二位/邻居位效应的电荷陷阱存储器件的方法
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摘要
A method for programming a memory is provided. The memory includes a number of cells and has a preset PV level for a target cell. The method includes programming a first-side of the target cell to have a Vt level not lower than the preset PV level; reading a Vt level of a second-side of the target cell and accordingly obtaining a corrected PV level corresponding to the first-side; and programming the first-side of the target cell to have a Vt level not lower than the corresponding corrected PV level.
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