Semiconductor device method of manfacturing a quantum well structure and a semiconductor device comprising such a quantum well structure

摘要

A semiconductor device (1) and a method are disclosed for obtaining on a substrate (2) a multilayer structure (3) with a quantum well structure (4). The quantum well structure (4) comprises a semiconductor layer (5) sandwiched by insulating layers (6,6′), wherein the material of the insulating layers (6,6′) has preferably a high dielectric constant. In a FET the quantum wells (4,9) function as channels, allowing a higher drive current and a lower off current. Short channel effects are reduced. The multi-channel FET is suitable to operate even for sub-35 nm gate lengths.;In the method the quantum wells are formed by epitaxial growth of the high dielectric constant material and the semiconductor material alternately on top of each other, preferably with MBE.