首页> 外国专利> Amorphous transparent conductive film, sputtering target as its raw material, amorphous transparent electrode substrate, process for producing the same and color filter for liquid crystal display

Amorphous transparent conductive film, sputtering target as its raw material, amorphous transparent electrode substrate, process for producing the same and color filter for liquid crystal display

机译:非晶态透明导电膜,以溅射靶为原料,非晶态透明电极基板,其制造方法以及液晶显示用滤色器

摘要

A transparent conductive film of low resistivity excelling in transparency and etching properties; a sputtering target as its raw material; an amorphous transparent electrode substrate having the transparent conductive film superimposed on a substrate; and a process for producing the same. In particular, an amorphous transparent conductive film comprising at least indium oxide and zinc oxide, which contains at least one third metal selected from among Re, Nb, W, Mo and Zr and satisfies the formulae: 0.75≦[In]/([In]+[Zn])≦0.95 (1) 1.0×10−4≦[M]/([In]+[Zn]+[M])≦1.0×10−2 (2) wherein [In][Zn] and [M] represent the atomicity of In, atomicity of Zn and atomicity of third metal, respectively. This amorphous transparent conductive film exhibits amorphism ensuring excellent etching processability and exhibits low specific resistance and high mobility.
机译:一种低电阻率的透明导电膜,具有优异的透明度和蚀刻性能;以溅射靶为原料;具有透明导电膜叠置在基板上的非晶透明电极基板;及其生产方法。特别地,至少包含氧化铟和氧化锌的非晶态透明导电膜,其包含选自Re,Nb,W,Mo和Zr的至少一种第三金属,并且满足下式:0.75≤[In] /([In ] + [Zn])≤0.95(1)1.0×10 -4 ≤[M] /([In] + [Zn] + [M])≤1.0×10 -2 (2)其中,[In] [Zn]和[M]分别表示In的原子数,Zn的原子数和第三种金属的原子数。该非晶质透明导电膜显示出确保优异的蚀刻加工性的非晶性,并且显示出低电阻率和高迁移率。

著录项

  • 公开/公告号US7897067B2

    专利类型

  • 公开/公告日2011-03-01

    原文格式PDF

  • 申请/专利权人 KAZUYOSHI INOUE;

    申请/专利号US20040557194

  • 发明设计人 KAZUYOSHI INOUE;

    申请日2004-04-19

  • 分类号H01B1/08;H01B13/00;H01B5/14;C23C14/08;C23C14/34;

  • 国家 US

  • 入库时间 2022-08-21 18:08:28

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