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Method for simulating long-term performance of a non-volatile memory by exposing the non-volatile memory to heavy-ion radiation
Method for simulating long-term performance of a non-volatile memory by exposing the non-volatile memory to heavy-ion radiation
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机译:通过将非易失性存储器暴露于重离子辐射中来模拟非易失性存储器的长期性能的方法
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摘要
Testing a non volatile memory by exposing the non volatile memory to particle radiation (e.g. xenon ions) to emulate memory cell damage due to data state changing events of a non volatile memory cell. After the exposing, the memory cells are subjected to tests and the results of the tests are used to develop reliability indications of the non volatile memory. Integrated circuits with non volatile memories of the same design are provided. Reliability representations of the integrated circuits can be made with respect to a number of data state charging events based on the exposure and subsequent tests.
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