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Non-volatile memory device, driving method of memory controller controlling the non-volatile memory device and memory system including the memory controller and the non-volatile memory device

机译:非易失性存储装置,控制非易失性存储装置的存储控制器的驱动方法以及包括该存储控制器和非易失性存储装置的存储系统

摘要

The present inventive concept provides a driving method of memory controller controlling nonvolatile memory device using variable resistive element. The memory controller may control a plurality of first memory devices and a second memory device. A number of write drivers in the second memory device may be driven when a number of first memory devices among the plurality of first memory devices are used. A different number of write drivers in the second memory device may be driven when a different number of first memory devices among the plurality of first memory devices are used.
机译:本发明构思提供了一种使用可变电阻元件来控制非易失性存储装置的存储控制器的驱动方法。存储器控制器可以控制多个第一存储器设备和第二存储器设备。当使用多个第一存储设备中的多个第一存储设备时,可以驱动第二存储设备中的多个写驱动器。当使用多个第一存储设备中的不同数量的第一存储设备时,可以驱动第二存储设备中不同数量的写驱动器。

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