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Program and erase methods with substrate transient hot carrier injections in a non-volatile memory
Program and erase methods with substrate transient hot carrier injections in a non-volatile memory
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机译:在非易失性存储器中进行衬底瞬态热载流子注入的编程和擦除方法
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摘要
The present invention describes a uniform program method and a uniform erase method of a charge trapping memory by employing a substrate transient hot electron technique for programming, and a substrate transient hot hole technique for erasing, which emulate an FN tunneling method for NAND memory operation. The methods of the present invention are applicable to a wide variety of charge trapping memories including n-channel or p-channel SONOS types of memories and floating gate (FG) type memories. the programming of the charge trapping memory is conducted using a substrate transient hot electron injection in which a body bias voltage Vb has a short pulse width and a gate bias voltage Vg has a pulse width that is sufficient to move electrons from a channel region to a charge trapping structure.
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