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Sub-volt bandgap voltage reference with buffered CTAT bias

机译:具有缓冲CTAT偏置的亚伏特带隙基准电压源

摘要

Circuits, methods, and apparatus that provide voltage references having a temperature independent output voltage that is less then the bandgap of silicon. The temperature coefficient and absolute voltage can be independently adjusted. One example generates two voltages, the first of which is proportional-to-absolute temperature and the second of which is complementary-to-absolute temperature. These voltages are placed across a first resistor. The first resistor is further connected to a second resistor to form a resistor divider. The resistor divider provides a reduced voltage that is below that bandgap of silicon. The temperature coefficient of the reference voltage provided by the resistor divider can be set by adjusting the first resistor. The absolute voltage provided can be set by adjusting the second resistor.
机译:提供参考电压的电路,方法和装置,其电压独立于温度的输出电压小于硅的带隙。温度系数和绝对电压可以独立调节。一个示例产生两个电压,第一个电压与绝对温度成正比,第二个电压与绝对温度成正比。这些电压被放置在第一电阻器两端。第一电阻器还连接到第二电阻器以形成电阻器分压器。电阻分压器提供的降低电压低于硅的带隙。电阻分压器提供的参考电压的温度系数可以通过调节第一电阻来设置。可以通过调节第二电阻器来设置提供的绝对电压。

著录项

  • 公开/公告号US7863884B1

    专利类型

  • 公开/公告日2011-01-04

    原文格式PDF

  • 申请/专利权人 SCOTT DOUGLAS CARPER;

    申请/专利号US20090350899

  • 发明设计人 SCOTT DOUGLAS CARPER;

    申请日2009-01-08

  • 分类号G05F3/16;G05F3/20;

  • 国家 US

  • 入库时间 2022-08-21 18:07:34

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