首页> 外文期刊>Journal of Circuits, Systems, and Computers >BANDGAP VOLTAGE REFERENCE IC FOR HV AUTOMOTIVE APPLICATIONS WITH PSEUDO-REGULATED BIAS AND SERVICE REGULATOR
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BANDGAP VOLTAGE REFERENCE IC FOR HV AUTOMOTIVE APPLICATIONS WITH PSEUDO-REGULATED BIAS AND SERVICE REGULATOR

机译:带伪偏置和服务调节器的高压汽车应用的带隙电压基准IC

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摘要

The paper presents a bandgap voltage reference (BGR) implemented in TSMC 0.25μm BCD technology for an automotive application. To withstand a car's battery large voltage variations, from 5 V to 40 V, the circuit features an embedded pseudo-regulator providing a stable bias current for the bandgap core. High-voltage (HV) MOS count has been kept low thus allowing the design of a compact BGR with an area of 0.118 mm-2. The BGR has been designed to operate in automotive extended temperature range (-40℃ to 150℃) and it provides a stable voltage of 1.21V, which is also used as reference for a cascade 3.7 V linear regulator. Measurements carried on fabricated IC samples prove the effectiveness of the BGR design in terms of supported input voltage variations and operating temperature range, temperature drift, line regulation and PSRR performance.
机译:本文提出了一种以TSMC0.25μmBCD技术实现的带隙电压基准(BGR),用于汽车应用。为了承受汽车电池从5 V至40 V的大电压变化,该电路具有嵌入式伪稳压器,可为带隙磁芯提供稳定的偏置电流。高电压(HV)MOS数量一直保持较低,因此允许设计面积为0.118 mm-2的紧凑型BGR。 BGR设计为可在汽车扩展温度范围(-40℃至150℃)下工作,并提供1.21V的稳定电压,该电压也可作为级联3.7 V线性稳压器的参考。在支持的输入电压变化和工作温度范围,温度漂移,线路调节和PSRR性能方面,对制成的IC样品进行的测量证明了BGR设计的有效性。

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