PROCESS FOR THE PRODUCTION OF Cu(In,Ga)Se2/CdS THIN-FILM SOLAR CELLS

摘要

A process for the preparation of a CuInGaSe₂ thin film useable as an absorber layer in CulnGaSe₂/CdS solar cells, in which said thin film is obtained by sputtering deposition of a Cu-Ga alloy on a CuInSe₂ film, deposited on a substrate covered by an Mo film, and subsequent selenization. Before selenization, In₂Se₃ and Cu are mixed in a vacuum chamber in the absence of Se. The process uses a polycrystalline target for the deposition of In₂Se₃. This process is suitable for the production - at industrial level - of CdS thin film solar cells in which the absorber layer is constituted by Cu(In1Ga)Se2.