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Performance of Graphene–CdS Hybrid Nanocomposite Thin Film for Applications in Cu(InGa)Se2 Solar Cell and H2 Production

机译:石墨烯-CdS杂化纳米复合薄膜在Cu(InGa)Se2太阳能电池和氢气生产中的性能

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摘要

A graphene–cadmium sulfide (Gr–CdS) nanocomposite was prepared by a chemical solution method, and its material properties were characterized by several analysis techniques. The synthesized pure CdS nanoparticles (NPs) and Gr–CdS nanocomposites were confirmed to have a stoichiometric atomic ratio (Cd/S = 1:1). The Cd 3d and S 2p peaks of the Gr–CdS nanocomposite appeared at lower binding energies compared to those of the pure CdS NPs according to X-ray photoelectron spectroscopy analyses. The formation of the Gr–CdS nanocomposite was also evidenced by the structural analysis using Raman spectroscopy and X-ray diffraction. Transmission electron microscopy confirmed that CdS NPs were uniformly distributed on the graphene sheets. The absorption spectra of both the Gr–CdS nanocomposite and pure CdS NPs thin films showed an absorption edge at 550 nm related to the energy band gap of CdS (~2.42 eV). The Cu(In,Ga)Se thin film photovoltaic device with Gr–CdS nanocomposite buffer layer showed a higher electrical conversion efficiency than that with pure CdS NPs thin film buffer layer. In addition, the water splitting efficiency of the Gr–CdS nanocomposite was almost three times higher than that of pure CdS NPs.
机译:通过化学溶液法制备了石墨烯-硫化镉(Gr-CdS)纳米复合材料,并通过多种分析技术表征了其材料性能。合成的纯CdS纳米颗粒(NPs)和Gr-CdS纳米复合材料被证实具有化学计量的原子比(Cd / S = 1:1)。根据X射线光电子能谱分析,与纯CdS NPs相比,Gr–CdS纳米复合材料的Cd 3d和S 2p峰具有较低的结合能。使用拉曼光谱和X射线衍射的结构分析也证明了Gr–CdS纳米复合材料的形成。透射电子显微镜证实,CdS NPs均匀分布在石墨烯片上。 Gr-CdS纳米复合材料和纯CdS NPs薄膜的吸收光谱在550 nm处显示出与CdS的能带隙(〜2.42 eV)相关的吸收边。具有Gr–CdS纳米复合缓冲层的Cu(In,Ga)Se薄膜光伏器件比纯CdS NPs薄膜缓冲层具有更高的电转换效率。此外,Gr–CdS纳米复合材料的水分解效率几乎是纯CdS NP的三倍。

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