Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer

摘要

A group III nitride based high electron mobility transistor (HEMT), comprises; a semiconductor buffer layer; a high polarization semiconductor layer on said buffer layer; a semiconductor barrier layer on said high polarization layer so that said high polarization layer is sandwiched between said buffer and barrier layers, each of said layers having a non-zero total polarization pointing in the same direction, the magnitude of said polarization in said high polarization layer higher than the polarization of said buffer and barrier layers; and a two dimensional electron gas at the interface between said buffer layer and said high polarization layer.