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PHOTOELECTROCHEMICAL ROUGHENING OF P-SIDE-UP GAN-BASED LIGHT EMITTING DIODES
PHOTOELECTROCHEMICAL ROUGHENING OF P-SIDE-UP GAN-BASED LIGHT EMITTING DIODES
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机译:P侧向上基于GAN的发光二极管的光化学粗加工
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摘要
A method for photoelectrochemical (PEC) etching of a p-type gallium nitride (GaN) layer of a heterostructure, comprising using an internal bias in a semiconductor structure to prevent electrons from reaching a surface of the p-type layer, and to promote holes reaching the surface of the p-type layer, wherein the semiconductor structure includes the p-type layer, an active layer for absorbing PEC illumination, and an n-type layer.
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