首页> 外国专利> LANTHANUM OXIDE-BASED SINTERED OBJECT, SPUTTERING TARGET COMPRISING THE SINTERED OBJECT, PROCESS FOR PRODUCING LANTHANUM OXIDE-BASED SINTERED OBJECT, AND PROCESS FOR SPUTTERING TARGET PRODUCTION USING THE PROCESS

LANTHANUM OXIDE-BASED SINTERED OBJECT, SPUTTERING TARGET COMPRISING THE SINTERED OBJECT, PROCESS FOR PRODUCING LANTHANUM OXIDE-BASED SINTERED OBJECT, AND PROCESS FOR SPUTTERING TARGET PRODUCTION USING THE PROCESS

机译:基于氧化镧的烧结物体,包括烧结物体的溅射目标,生产基于氧化镧的烧结物体的过程以及使用该过程溅射目标产品的过程

摘要

A lanthanum oxide-based sintered compact having lanthanum oxide as a basic component, wherein the sintered compact contains one or more of titanium oxide, zirconium oxide and hafnium oxide with the remainder being lanthanum oxide and unavoidable impurities. A method of producing a lanthanum oxide-based sintered compact, wherein La2(CO3)3 powder or La2O3 powder as lanthanum oxide raw material powder and one or more of TiO2, ZrO2 and HfO2 powders as an additive oxide are used, blending and mixing are performed so that the composition ratio of metal components of the additive oxide becomes a predetermined value based on the metal conversion, the mixed powder is thereafter heated and synthesized in the atmosphere, the synthesized material is subsequently pulverized to obtain powder, and the synthesized powder is thereafter hot pressed into a sintered compact. This invention prevents the sintered compact from combining with moisture or carbon dioxide gas to form hydroxide or the like and changing into powder form, and enables the long term storage thereof. Moreover, as a result of performing deposition with this sputtering target, oxide for use in a high-k gate insulator film can be efficiently and stably provided.
机译:一种以氧化镧为基本成分的氧化镧基烧结体,其中,所述烧结体包含氧化钛,氧化锆和氧化ha中的一种或多种,​​其余为氧化镧和不可避免的杂质。一种氧化镧基烧结体的制造方法,其中La 2 (CO 3 3 粉末或La 2 O 3 粉末和TiO 2 ,ZrO 2 和HfO 2 中的一种或多种使用亚粉末作为添加剂氧化物,进行混合和混合,使得添加剂氧化物的金属成分的组成比基于金属转化率成为预定值,然后将混合的粉末在大气中加热并合成,随后将合成材料粉碎以获得粉末,然后将合成粉末热压成烧结体。本发明防止了烧结体与水分或二氧化碳气体结合而形成氢氧化物等而变成粉末状,并且能够长期保存。此外,作为利用该溅射靶进行蒸镀的结果,可以高效且稳定地提供用于高k栅绝缘膜的氧化物。

著录项

  • 公开/公告号EP2298715A1

    专利类型

  • 公开/公告日2011-03-23

    原文格式PDF

  • 申请/专利权人 JX NIPPON MINING & METALS CORPORATION;

    申请/专利号EP20090794307

  • 发明设计人 SATOH KAZUYUKI;KOIDO YOSHIMASA;

    申请日2009-06-23

  • 分类号C04B35/50;C04B35/00;C23C14/34;

  • 国家 EP

  • 入库时间 2022-08-21 17:54:58

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