首页>
外国专利>
LANTHANUM OXIDE-BASED SINTERED OBJECT, SPUTTERING TARGET COMPRISING THE SINTERED OBJECT, PROCESS FOR PRODUCING LANTHANUM OXIDE-BASED SINTERED OBJECT, AND PROCESS FOR SPUTTERING TARGET PRODUCTION USING THE PROCESS
LANTHANUM OXIDE-BASED SINTERED OBJECT, SPUTTERING TARGET COMPRISING THE SINTERED OBJECT, PROCESS FOR PRODUCING LANTHANUM OXIDE-BASED SINTERED OBJECT, AND PROCESS FOR SPUTTERING TARGET PRODUCTION USING THE PROCESS
as-sintered body according to The basic components of lanthanum oxide, titanium oxide, zirconium oxide, hafnium oxide of 1 or 2 contain not less than, and the balance of lanthanum oxide and lanthanum oxide-based sintered compact of unavoidable impurities. Lanthanum oxide powder as raw material, La 2 (CO 3 ) 3 powder or La 2 O 3 powder, TiO oxide added as a 2 , ZrO 2 , HfO 2 with 1 or 2 or more of the powder, metal in terms of, and the composition ratio of metal components of the mixed oxide was added in combination so that the predetermined value, the composite is heated in air, and the mixed powder, and then pulverized into a powder and then this composite material, the composite powder is hot method of producing a lanthanum oxide-based sintered body in a press to sinter. The present invention, prevents moisture or carbon dioxide gas, and that combined with the change in the powder to form a hydroxide or the like, and to enable long term storage. In addition, by film formation using this sputtering target, High-k gate oxide for the insulating film effectively also provides a technique that can provide a stable.
展开▼