BACK SIDE LIGHT RECEIVING CMOS IMAGE SENSOR WHICH INCLUDES A REFLECTION BARRIER FILM WITH AN IMPROVED PERMEABILITY THROUGH A RAPID THERMAL PROCESS, AND A MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A back side light receiving CMOS image sensor and a manufacturing method thereof are provided to improve a dark current property by improving the refractive ratio of a reflection barrier layer and the interface property between the semiconductor substrate and the reflection barrier layer.;CONSTITUTION: A plurality of photo diodes(106) are formed in the light receiving region of a semiconductor substrate having a first side(102) and a second side(104). A metal line(120) is formed in the first plane of the semiconductor substrate. The second side of the semiconductor substrate is partly removed. A reflection barrier layer(130) is formed on the second side of the semiconductor substrate. A part of the light receiving region of the semiconductor substrate and the reflection barrier layer is rapidly annealed.;COPYRIGHT KIPO 2011