METHOD FOR MANUFACTURING A CHARGE TRAP TYPE FLASH MEMORY DEVICE, CAPABLE OF IMPROVING INTEGRATION AND SIMPLIFYING PROCESSES

摘要

PURPOSE: A method for manufacturing a charge trap type flash memory device is provided to improve the electric property of the charge trap type flash memory device by including a charge trap layer which is electrically separated by a charge blocking pattern.;CONSTITUTION: A first selection transistor with an active layer(100) made of a poly silicon layer is formed on a substrate. An interlayer insulation layer(160) is formed on the substrate. A conductive layer(170) and an insulation layer(180) are alternatively formed on the interlayer insulation layer. A through hole is formed to expose the channel region of the first selection transistor. A tunneling layer, a charge trap layer, and a blocking layer are successively formed on the side of the through hole.;COPYRIGHT KIPO 2011