ELECTROSTATIC DISCHARGE PROTECTION ELEMENT, CAPABLE OF PREVENTING DAMAGE TO AN INTERNAL CIRCUIT DUE TO ELECTROSTATIC DISCHARGE STRESS

摘要

PURPOSE: An electrostatic discharge protection element is provided to appropriately control a thermal destruction voltage and a snapback prevention voltage by controlling the number and size of a diode which is serially connected to.;CONSTITUTION: A deep-N well(400) is formed in the fixed region of a semiconductor substrate. An N-well(420) for an anode and a P-well(410) for a MOSFET are formed within the deep-N well. A P-well(430) for a diode is additionally arranged in the vicinity of the P-well for a MOSFET. The N-well is inserted into a space between the P-well for a MOSFET and the P-well for a diode. An N region(431) for the diffusion of a diode and a P region(432) for the diffusion of a diode pick-up are arranged inside the P-well for a diode.;COPYRIGHT KIPO 2011