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PROCESS FOR PRODUCING SILICON NITRIDE FILM, PROCESS FOR PRODUCING SILICON NITRIDE FILM LAMINATE, COMPUTER-READABLE STORAGE MEDIUM, AND PLASMA CVD DEVICE
PROCESS FOR PRODUCING SILICON NITRIDE FILM, PROCESS FOR PRODUCING SILICON NITRIDE FILM LAMINATE, COMPUTER-READABLE STORAGE MEDIUM, AND PLASMA CVD DEVICE
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机译:制备氮化硅膜的过程,制备氮化硅膜层合物,计算机可读存储介质和等离子CVD装置的过程
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摘要
Provided is a plasma CVD device. In the plasma CVD device, in producing a silicon nitride film while controlling the size of a band gap by CVD, microwaves are introduced into a treatment vessel by a flat antenna having a plurality of holes. The plasma CVD is carried out under a given treatment pressure selected from a pressure range of not less than 0.1 Pa and not more than 1333 Pa at a flow ratio between a silicon-containing compound gas and a nitrogen gas (silicon-containing compound gas flow rate/nitrogen gas flow rate) selected from a range of not less than 0.005 and not more than 0.2, whereby the Si/N ratio in the film is controlled to form a silicon nitride film having a band gap size of not less than 2.5 eV and not more than 7 eV.
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