Stacked nonvolatile memory cell device, and nonvolatile memory cell stack, nonvolatile memory cell string, nonvolatile memory cell array using the cell device, and fabricating method thereof

摘要

PURPOSE: A stacked nonvolatile memory cell device, a nonvolatile memory cell stack, a nonvolatile memory cell string, a nonvolatile memory cell array using the same, and a method for manufacturing the same is provided to improve a sell spreading property by comprising a body in which a channel is formed into a single crystal semiconductor. CONSTITUTION: A control electrode(8) is formed on the surface of a semiconductor substrate(1) into a vertical pillar type. An insulating film is formed between the control electrode and the semiconductor substrate. A gate stack(14) is formed on the lateral side of the control electrode. A first insulating film(9) is formed on the lateral side of the gate stack. A first semiconductor region(10) is formed on the lateral side of the first insulating film. A second semiconductor region(11) is formed on the lateral side of the gate stack.