METHOD FOR PROGRAMMING A NONVOLATILE MEMORY DEVICE, CAPABLE OF IMPLEMENTING A PROGRAMMING OPERATION BY INCREASING A BIT-LINE VOLTAGE

摘要

PURPOSE: A method for programming a nonvolatile memory device is provided to regulate the distribution of a threshold voltage by applying a voltage for controlling the increase of the threshold voltage to bit-lines.;CONSTITUTION: A program voltage is applied to word-lines(S1). A ground voltage is applied to bit-lines as a bit-line voltage in order to implement a programming operation. An analyzing voltage is applied to the word-lines(S7). When the analyzing voltage is applied, the ground voltage is maintained if the sensing current of a memory cell is higher than the reference current of the analyzing voltage The bit-line voltage is increased(S9). The programming operation is re-implemented.;COPYRIGHT KIPO 2011