A MODULAR BIPOLAR-CMOS-DMOS ANALOG INTEGRATED CIRCUIT AND POWER TRANSISTOR TECHNOLOGY

摘要

Family's semiconductor devices is formed in the semiconductor substrate without containing epitaxial layer. In one embodiment, which includes 5V CMOS couple, 12V CMOS couple, 5V NPN, 5V PNP, lateral trench MOSFET, the 30V transverse direction n- channels DMOS of several forms. Each device, and can be completely and in all other device substrate laterally and vertically very compact.