PURPOSE: A method for manufacturing a poly-vinylidene fluoride(PVDF)/poly methyl methacrylate(PMMA) based thin film and a method for manufacturing a non-volatile memory device using the thin film are provided to obtain a high remanent-polarization property by applying the thin film to several components of a memory device including a capacitor and a field effect transistor. CONSTITUTION: A mixture solution of PMMA and PVDF is spin-coated to form a thin film. The spin-coated thin film is melted at a temperature which is higher than the melting point of the PVDF and the PMMA. The melted thin film is quenched. The quenched thin film is annealed. The annealing temperature is between 100 and 155 degrees Celsius. The ratio of the PMMA is between 10 and 20 weight% with respect to the total weight of the mixture solution.
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