CELL STRUCTURE OF A DUAL PORT STATIC RANDOM ACCESS MEMORY, CAPABLE OF FORMING PASS-GATE TRANSISTOR UNITS IN AN IDENTICAL ACTIVE REGION

摘要

PURPOSE: The cell structure of a dual port static random access memory(SRAM) is provided to be adapted to cells using finFET units by including a first access port and a second access port in connection with a first word-line conductor and a second word-line conductor.;CONSTITUTION: A pass-gate transistor(PG)-1 and a PG-2 are formed in a first active region(200). A PG-3 and a PG-4 are formed in a second active region(215). A pull-down transistor(PD)-12 and a PD-11 are formed in a third active region(205). A PD-21 and a PD-22 are formed in a fourth active region(210). The pull-up transistor(PU)-1 and a PU-2 are respectively formed in a fifth active region(220) and a sixth active region(225).;COPYRIGHT KIPO 2011