This method of detecting substrate arcing in a semiconductor plasma processing apparatus is provided . The substrate is positioned on a substrate support in a reaction chamber of a plasma processing apparatus . The process gas is introduced into the reaction chamber . The plasma is generated from a process gas , the substrate is processed by the plasma . Real-time analysis of the intensity signal of the selected gas species generated in the reaction chamber during plasma processing is monitored . These gas species are generated by a substrate arcing event . The arcing event is detected when the intensity exceeds a threshold value .
展开▼
