MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE EQUIPPED WITH THE BURIED GATE, CAPABLE OF PREVENTING THE PROPERTY DETERIORATION OF THE SEMICONDUCTOR

摘要

PURPOSE: A manufacturing method of a semiconductor device equipped with the buried gate is provided to prevent the formation of a protrusion on a boundary area between a cell area and a peri area by forming a gate conductive layer on the peri area before forming a plug.;CONSTITUTION: A gate conductive film(37A) is selectively formed on the peri area of a substrate(31) having the cell area and the peri area. A sealing film(39) is formed along the structure surface including the gate conductive film. An insulating layer(40A) is formed on the sealing film in order to cover the structure including the gate conductive film.;COPYRIGHT KIPO 2011