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METHOD AND SYSTEM FOR ETCHING A SILICON OXIDE FILM USING A DENSE CARBON DIOXIDE CAPABLE OF ELIMINATING A SILICON OXIDE FILM USED AS A SACRIFICIAL FILM
METHOD AND SYSTEM FOR ETCHING A SILICON OXIDE FILM USING A DENSE CARBON DIOXIDE CAPABLE OF ELIMINATING A SILICON OXIDE FILM USED AS A SACRIFICIAL FILM
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机译:用能消除用作牺牲膜的氧化硅膜的稠密二氧化碳来氧化氧化硅膜的方法和系统
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摘要
PURPOSE: A method and system for etching a silicon oxide film using a dense carbon dioxide are provided to eliminate generation of etching byproducts, thereby omitting an additional cleaning process.;CONSTITUTION: A semiconductor substrate for forming a structure is provided into a processing chamber(S10). Highly dense carbon dioxide is supplied into the processing chamber to etch a sacrificial film(S20). Pure highly dense carbon dioxide is supplied so that fluid in the processing chamber is eliminated(S30). The pressure of the processing chamber is lowered so that the substrate is dried(S40).;COPYRIGHT KIPO 2011
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