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ETCHANT OF SILICON NITRIDE FILM CAPABLE OF INHIBITING ETCHING OF A SILICONE OXIDE FILM WHILE MAINTAINING THE ETCHING RATE OF A SILICON NITRIDE FILM
ETCHANT OF SILICON NITRIDE FILM CAPABLE OF INHIBITING ETCHING OF A SILICONE OXIDE FILM WHILE MAINTAINING THE ETCHING RATE OF A SILICON NITRIDE FILM
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机译:能够在维持硅氮化物膜的刻蚀速率的同时抑制硅氧化物膜刻蚀的硅氮化物膜的刻蚀剂
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PURPOSE: An etchant of silicon nitride film is provided to have an excellent selection ratio and an etching rate of nitride film, to prevent generation of foreign substances within a wafer, and to be able to be effectively utilized in etching a silicon nitride film in micro processes.;CONSTITUTION: An etchant of silicon nitride film comprises 50-90 weight% of phosphoric acid, 10-3,000 ppm of silicon oxide film etching inhibitor, 1-500 ppm of silicon nitride film etching increasing agent, and residual portion of water to make 100 weight% of the total weight of the etchant. The silicon oxide film etching inhibitor is selected from the group consisting of polyacrylic acid, polyacrylamide, polyallyl ammonium, polyacrylamide - polyaryl ammonium copolymer, and their mixture. The silicon nitride film etching increasing agent is a fluoride compound.;COPYRIGHT KIPO 2013
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